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| BAS 16W Silicon Switching Diode * For high speed switching applications Type BAS 16W Marking Ordering Code A6s Q62702-A1050 Pin Configuration 1=A 3=C Package SOT-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total Power dissipation Symbol Values 75 85 250 4.5 mW 250 150 - 65 ... + 150 260 125 C mA Unit V VR VRM IF IFS Ptot Tj Tstg RthJA RthJS TS 119 C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAS 16W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Breakdown voltage Values typ. max. Unit V(BR) 75 - V mV 715 855 1000 1250 A 1 30 50 I(BR) = 100 A Forward voltage VF IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current IR VR = 70 V, TA = 25 C VR = 25 V, TA = 150 C VR = 75 V, TA = 150 C AC characteristics Diode capacitance CD 2 pF ns 6 VR = 0 V, f = 20 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAS 16W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25C 300 mA IF TA 200 TS 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) 10 3 10 2 K/W RthJS 10 2 IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 3 Nov-28-1996 BAS 16W Forward voltage VF = f (TA) Reverse current IR = f (TA) Semiconductor Group 4 Nov-28-1996 |
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